Standard MOS Module

The standard MOS Module provides complete functionality for the synthesis and electrical analysis of a range of MOS devices. This includes N-type and P-type MOSFET, bulk and SOI devices, one-dimensional MOS capacitors, etc. A large number of standard electrical tests are provided ranging from leakage current calculation to tracing of breakdown curves.

Device geometry, mesh and doping are controlled by a small number of parameters. A good quality mesh with a small overall node count is obtained for most mesh density parameter values.

Electrical tests are defined as iTcl functions contained in the Module file. These functions include all steps required to achieve convergence and accuracy such as turning the appropriate physical models on and ramping up electrode biases as appropriate. As an example, breakdown curves can be traced automatically for different device structures or biasing conditions (in this case gate-to-source voltage):

1. Device optimization and inverse modeling can be carried out using the built-in Design of Experiments (DOE) and Optimization functionality. For instance, geometry and doping profile parameters can be determined automatically for specified performance targets or to match experimentally obtained data.
2. The optional Lattice Heat plug-in product provides functionality for the simulation of second breakdown, self-heating especially important in SOI devices, etc.
3. The optional Mixed-Mode plug-in product can be used to determine circuit-specific performance of a MOSFET generated with the MOS Module. Commonly used circuits include NMOS and CMOS ring oscillators, etc.