SEQUOIA Device Designer can be used to model a wide variety of semiconductor devices. Customization of the software to specific device types is done via user-editable MODULEs. New Modules are added continuously on an as needed basis. A partial list of currently available modules is shown below, please contact SEQUOIA Design Systems if you have other simulation needs.
Following simulation Modules are currently available and included in the standard software distribution. All Modules are written in iTcl, an object-oriented scripting language. Modules are provided in source code to allow for end-user editing:
MOS: Standard MOSFET Module (covers NMOS, PMOS, SOI, 1D MOS Capacitors). Includes many common electrical tests such as Vth, Ioff, Idsat, breakdown, etc.
MOS1: Alternate MOSFET Module derived from the Standard MOS Module, inherits all of that Module's electrical tests.
LDMOS, parametrized lateral power MOSFET.
JFET, a generic junction FET structure. This Module is derived from the standard MOS Module and inherits its electrical tests overriding some as necessary.
BJT, DC and transient simulation of bipolar junction transistors. This Module is derived from the basic Slab Module.
Diode, basic two-dimensional structure. This Module is derived from the basic Slab Module.
Interconnect Module, provides a parametrized interconnect structure with
several conductors over a ground plane embedded in layers of dielectrics.
Coupling capacitances are extracted.
Isolation Module, parametrized STI isolation structure allows transient latchup
simulations to characterize reliablity. Manufacturing variations can be taken
into account (misalignments, etc.).
General Module, demonstrates structure and mesh creation for a non-standard device.
Notes
plug-in product is included in most of the listed Modules.
plug-in product can use any device structure created by any Module.